1/8 may 2001 STW12NB60 n-channel 600v - 0.5 w - 12a to-247 powermesh?ii mosfet n typical r ds (on) = 0.5 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay? process, stmicroelectronics has designed an ad- vanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprieraty edge termi- nation structure, gives the lowest rds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. applications n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive absolute maximum ratings type v dss r ds(on) i d STW12NB60 600v < 0.6 w 12 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 12 a i d drain current (continuos) at t c = 100c 7.56 a i dm ( l ) drain current (pulsed) 48 a p tot total dissipation at t c = 25c 190 w derating factor 1.52 w/c dv/dt(1) peak diode recovery voltage slope 4 v/ns t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c (1)i sd 12a, di/dt 100a/s, v dd v (br)dss , t j t jmax. to-247 1 2 3 internal schematic diagram
STW12NB60 2/8 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 0.658 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 12 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 450 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 5.5a 0.5 0.60 w symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds > i d(on) x r ds(on)max, i d = 5.5a 9s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 2200 pf c oss output capacitance 285 pf c rss reverse transfer capacitance 30 pf
3/8 STW12NB60 safe operating area thermal impedance electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time rise time v dd = 300v, i d = 5.5 a r g = 4.7 w , v gs = 10v (see test circuit, figure 3) 27 ns t r 12 ns q g total gate charge v dd = 480v, i d = 11 a, v gs = 10v, r g =4.7 w 54 70 nc q gs gate-source charge 17 nc q gd gate-drain charge 23 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 480v, i d = 11 a, r g = 4.7 w, v gs = 10v (see test circuit, figure 5) 20 ns t f fall time 15 ns t c cross-over time 32 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 12 a i sdm (2) source-drain current (pulsed) 48 a v sd (1) forward on voltage i sd = 12 a, v gs = 0 1.6 v t rr reverse recovery time i sd = 11 a, di/dt = 100 a/s, v dd = 100v, t j = 150c (see test circuit, figure 5) 600 ns q rr reverse recovery charge 6.5 c i rrm reverse recovery current 20.5 a
STW12NB60 4/8 gate charge vs gate-source voltage capacitance variations transconductance static drain-source on resistance transfer characteristics output characteristics
5/8 STW12NB60 source-drain diode forward characteristics normalized on resistance vs temperature normalized gate thereshold voltage vs temp.
STW12NB60 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/8 STW12NB60 dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 p025p to-247 mechanical data
STW12NB60 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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